This system is used for the synthesis of the device in the controlled atmosphere of the desired Gas.

Mask Aligner is the mask-dependent lithography system depending on the flood exposure of UV light.

This instrument is used for pattering for device fabrication using CAD based Mask. This instrument has a resolution of 5 µm.

This instrument can be used for extraction of the dielectric properties as well as thickness of the thin film typically of a few nm. The instrument relies on the fact that the reflection at a dielectric interface depends on the polarization of the light while the transmission of light through a transparent layer changes the phase of the incoming wave depending on the refractive index of the material

Atomic force microscopy (AFM) is a very high-resolution type of scanning probe microscopy, with demonstrated resolution on the order of fractions of a nanometer. The purpose of this instrument is to analyse the surface properties of thin films.

Field emission scanning electron microscopy (FESEM) provides topographical and elemental information at magnifications of 10x to 300,000x, with virtually unlimited depth of field. Applications of FESEM include:

 Semiconductor device cross section analyses for gate widths, gate oxides, film thicknesses, and construction details

 Advanced coating thickness and structure uniformity determination

The additional attachments with the FESEM allow the electrical characterization of transistor at nanometer level.